1.  V. Borjanović, I.Kovačević, B.Šantić, and B. Pivac: Deep Levels in Oxygen doped EFG Poly-Si; Materials Science & Engineering, B 71 (2000) 292-296.
  2. B. Pivac, I. Kovačević, and V. Borjanović: Defects in carbon and oxygen implanted p-type silicon, Nuclear Instrum. And Methods in Phys. Res. B 186 (2001) 355-359.
  3. B. Pivac, V. Borjanović,  I. Kovačević, B. N. Evtody, and E. Katz: Comparative studies of EFG ribbon poly-Si grown by different procedures, Sol. Cells & Sol. En. Mater. 72 (2002) 183-189.
  4. V. Borjanović, I. Kovačević, H. Zorc, and B. Pivac: Irradiation effects on polycristalline silicon, Sol. Cells & Sol. En. Mater  72 (2002) 487-494.
  5. B. Pivac, I. Kovačević, and I. Zulim: Defects Induced in Amorphous Silicon Thin Films by Light Soaking, Thin Solid Films 403-403 (2002) 513-516.
  6. I.Kovačević, V. Borjanovic, B.Pivac: Interstitial defects in ion-implanted Si, Vacuum 71 (2003) 129.
  7. B.Pivac, M.Pavlovic, I.Kovačević, B.Etlinger, I.Zulim: Light induced defects in amorphous silicon thin film, Vacuum 71 (2003) 135.
  8. I Kovačević, V P Markevich, I D Hawkins, B Pivac and A R Peaker: Vacancy related complexes in neutron irradiated silicon, J. Phys.: Condens. Matter 17  (2005) S2229.
  9. I. Kovačević and B.Pivac: Defect production in g-irradiated silicon at different temperatures, Vacuum 80 (2005) 223.
  10. I. Kovačević, P. Dubček, H. Zorc, N. Radić, B. Pivac, and S. Bernstorff: GISAXS characterization of Ge islands on Si(100) substrates, Vacuum 80 (2005) 69.
  11. I. Kovačević, B.Pivac, P. Dubček, N. Radić, S. Bernstorff and A.Slaoui: A GISAXS study of SiO/SiO2 superlattice, Thin Solid Films 511-512 (2006) 463.
  12. B.Pivac, I. Kovačević,  P. Dubček, N. Radić, S. Bernstorff and A.Slaoui: Self-organized growth of Ge islands on Si(100) substrates, Thin Solid Films 511-512 (2006) 153.
  13. B. Pivac, P. Dubcek, I. Kovačević, S. Bernstorff, R. Mu, M. Wu, A. Ueda and B. Vlahovic: GISAXS study of gold implanted fused silica, Scripta Materialia 55 (2006) 135.
  14. B.Pivac, I. Kovačević,  P. Dubček, N. Radić, S. Bernstorff: GISAXS study of Si nanocrystals formation in SiO2 thin films,Thin Solid Films 515 (2006) 756.
  15. N. Radić, B.Pivac, P. Dubček, I. Kovačević, S. Bernstorff: Growth of Ge islands on Si substrates, Thin Solid Films 515 (2006) 752.
  16. S. Bernstorff, P. Dubcek, B. Pivac, I. Kovačević, A. Sassella, A. Borghesi: GIXR and GISAXS study of silicon oxinitride films, Applied Surface Science 253 (2006) 33.
  17. I. Kovačević, B. Pivac, R. Jačimović, M.K. Khan, V.P. Markevich, and A.R. Peaker, Defects induced by irradiation with fast neutrons in n-type germanium,  Materials Science in Semiconductor Processing 9 (2006) 606.
  18. I. Kovačević, B. Pivac, P. Dubček, H. Zorc, N. Radić, S. Bernstorff, M. Campione, and A. Sassella, Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing, Applied Surface Science 253 (2007) 3034.
  19. S. Bernstorff, P. Dubček, I. Kovačević, N. Radić, B. Pivac: Si nanostructures in SiO2 films, Thin Solid Films 515 (2007) 5637
  20. A. Misiuk, B. Surma, J. Bak-Misiuk, C.A. Londos, P. Vagovič, I. Kovacevic, B. Pivac, W. Jung and M. Prujszczyk: Revealing the radiation – induced effects in silicon by processing at enhanced temperatures – pressures, Radiation Measurements 42 (2007) 688.
  21. I. Kovacević, P. Dubcek, S. Duguay, H. Zorc, N. Radić, B. Pivac, A. Slaoui and S. Bernstorff: Silicon nanoparticles formation in annealed SiO/SiO2 multilayers, Physica E 38 (2007) 50.
  22. I. Capan, V. Borjanović, and B. Pivac:  Dislocation-related deep levels in carbon rich p-type polycrystalline silicon, Solar Energy Materials and Solar Cells 91 (2007) 931.
  23. V.P. Markevich, A.R. Peaker, I. Capan, S.B. Lastovskii, L. Dobaczewski, V.V. Emtsev and N.V. Abrosimov: Electrically active defects induced by irradiations with electrons, neutrons and ions in Ge-rich SiGe alloys, Physica B: Condensed Matter 401-402 (2007) 184.
  24. P. Dubcek, B. Pivac, I. Capan, S. Bernstorff, R. Mu, B. Vlahovic: Evolution of nanoparticles in gold-implanted glass, Vacuum 82 (2008) 130
  25. B. Pivac, P. Dubcek, I. Capan, N.Radic, S. Bernstorff: GISAXS study of Si nanoclusters in SiO/SiO2 layers, Vacuum 82 (2008) 189.
  26. B. Pivac, P. Dubček, I. Capan, H. Zorc, S. Bernstorff, S. Duguay, A.Slaoui: Structural analysis of annealed amorphous SiO/SiO2 superlattice, Thin Solid Films 516 (2008) 6796.
  27. K. Kuitunen, F. Tuomisto, J. Slotte,  I. Capan:  Divacancy clustering in neutron-irradiated and annealed n -type germanium , Physical Review B 78 (2008) 033202.
  28. B. Pivac, P. Dubcek, I. Capan, I. Zulim, T. Betti, H. Zorc, S. Bernstorff: Nano Si Superlattices for the Next Generation Solar Cells, Journal of Nanoscience and Nanotechnology 9 (2009) 3853.
  29. I. Capan, B. Pivac, I.D. Hawkins, V.P. Markevich, A.R. Peaker, L. Dobaczewski and R. Jačimović: Neutron-irradiation-induced defects in germanium: A Laplace deep level transient spectroscopy study, Vacuum  84 (2010) 32.
  30. J. Slotte, K. Kuitunen, S. Kilpelainen, F. Tuomisto, I. Capan, Divacancies at room temperature in germanium, Thin Solid Films 518 (2010) 2314.
  31. B. Novoselnik, M. Pilipovic, R. Jacimovic, B. Pivac, R. Slunjski, I. Capan, Capacitance changes in neutron irradiated n-type silicon; the flux effect, Nuclear Instrum. And Methods in Phys. Res. B, 268 (2010) 2400.
  32. M. Buljan, J. Grenzer, V.Holý, N. Radic,T. Misic-Radic, S. Levichev, S. Bernstorff, B. Pivac and I. Capan, Structural and charge trapping properties of two bi-layer (Ge+SiO2)/SiO2 films deposited on rippled substrate, Applied Physics Letters 97 (2010) 163117.
  33. Robert Slunjski, Ivana Capan, Branko Pivac, Alessia Le Donne, Simona Binetti, Effects of low-temperature annealing on polycrystalline silicon for solar cells, Solar Energy Materials and Solar Cells, 95 (2011) 559.
  34. I. Capan, B.Pivac, and R. Slunjski, Electrical characterisation of Si-SiO2 structures, physica status solidi (c) 8 (2011) 816.   
  35. I. Capan, J. Bak-Misiuk, B. Pivac, P. Dubček, A. Misiuk, S. Bernstorff and P.Romanowski, Defects in silicon introduced by helium implantation and subsequent annealing, Radiation Physics and Chemistry 80 (2011) 1099.
  36. Željko Pastuović, Ettore Vittone, Ivana Capan, Milko Jakšić, Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation, Applied Physics Letters 98 (2011) 092101.
  37.  Ivana Capan, Vesna Janicki, Radojko Jacimovic, and Branko Pivac, C-V and DLTS Studies of Radiation Induced Si-SiO2 Interface Defects, Nuclear Instrum. And Methods in Phys. Res. B 282 (2012) 59.
  38. J. Martín-Sánchez, A. Chahboun, M. J. M. Gomes, A. G. Rolo, B. Pivac, and I. Capan, Carrier storage in Ge nanoparticles produced by pulsed laser deposition, physica status solidi RRL 6 (2012) 223.
  39. E. M. F. Vieira, J. Martín-Sánchez, A. G. Rolo, A. Parisini, M. Buljan, I. Capan, E. Alves, N. P. Barradas, O. Conde, S. Bernstorff, A. Chahboun, S. Levichev, M. J. M. Gomes, Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice,  Journal of Applied Physics 111 (2013) 104323.
  40.  Branko Pivac, Pavo Dubček, Ivana Capan, Hrvoje Zorc, Jasna Dasović, Sigrid Bernstorff, Marvin Wu, Branislav Vlahovic, GISAXS study of Si nano structures in SiO2 matrix for solar cell applications, physica status solidi A 210 (2013) 755.
  41. J. Martín-Sánchez, I. Capan, A. Chahboun, S.R.C. Pinto, E.M.F. Vieira, A.G. Rolo, and M.J.M. Gomes, Shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition: morphological, structural and charge trapping properties, Applied Surface Science 280 (2013) 632.
  42. Ž. Pastuovic, I. Capan , R. Siegele , R. Jacimovic, J. Forneris, D.D. Cohen, E. Vittone, Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon, Nuclear Instrum. And Methods in Phys. Res 332 (2014) 298.
  43. I Capan, A. Carvalho and J. Coutinho, Silicon and germanium nanocrystals: properties and characterization (review), Beilstein J. Nanotechnol.  5 (2014) 1787.
  44. Željko Pastuović, Ivana Capan, David D. Cohen, Jacopo Forneris, Naoya Iwamoto, Takeshi Ohshima, Rainer Siegele, Norihiro Hoshino and Hidekazu Tsuchida, Radiation Hardness of n-type SiC Schottky Barrier Diodes Irradiated with MeV He Ion Microbeam, Nuclear Instrum. And Methods in Phys. Res B348 (2015) 233  
  45. I. Capan, Ž. Pastuović, R. Siegele, R. Jačimović, Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range, Nuclear Instrum. And Methods in Phys. Res B 372 (2016) 156
  46. Nikša Krstulović, Polona Umek, Krešimir Salamon, and Ivana Capan, Synthesis of Al-doped ZnO nanoparticles by laser ablation of ZnO:Al2O3 target in water, Mater. Res. Express 4 (2017) 105003.
  47. Z. Pastuovic, I. Capan, S. Sato, T. Ohshima, T. Brodar, R. Siegele, Deep level defects in 4H-SiC introduced by ion implantation: The role of single ion regime, J. Phys.: Condens. Matter 29 (2017) 475701.
  48. Nikša Krstulović, Krešimir Salamon, Ognjen Budimlija, Janez Kovač, Jasna Dasović, Polona Umek, Ivana Capan, Parameters optimization for synthesis of Al-doped ZnO nanoparticles by laser ablation in water, Applied Surface Science 440 (2018) 916.
  49. Ivana Capan, Tomislav Brodar, Takeshi Ohshima, Shin-ichiro Sato, Takahiro Makino, Željko Pastuović, Rainer Siegele, Luka Snoj, Vladimir Radulović, José Coutinho, Vitor J. B. Torres, Kamel Demmouche, Double negatively charged carbon vacancy at the h- and k- sites in 4H-SiC: Combined Laplace-DLTS and DFT study, Journal of Applied Physics 123 (2018) 161597.
  50. M.Mozetič et al, Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology (review paper), Thin Solid Films 660 (2018) 120.
  51. Tomislav Brodar, Ivana Capan, Vladimir Radulović, Luka Snoj, Željko Pastuović, José Coutinho, and Takeshi Ohshima, Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC, Nuclear Inst. and Methods in Physics Research B 437 (2018) 27.
  52. Ivana Capan, Tomislav Brodar, Jose Coutinho, Takeshi Ohshima, Vladimir Markevich, Anthony Peaker, Acceptor levels of the carbon vacancy in 4H-SiC: combining Laplace deep level transient spectroscopy with density functional modeling, Journal of Applied Physics 124 (2018) 245701.
  53. Ivana Capan, Yuichi Yamazaki, Yuya Oki, Tomislav Brodar, Takahiro Makino and Takeshi Ohshima, Minority Carrier Trap in n-type 4H–SiC Schottky Barrier Diodes, Crystals 9 (2019) 328.
  54. Marin Kovacic, Klara Perovic, Josipa Papac, Antonija Tomic, Lev Matoh, Boštjan Žener, Tomislav Brodar, Ivana Capan, Angelja K. Surca, Hrvoje Kušic, Urška Lavrencic Štangar and Ana Loncaric Božic, One-Pot Synthesis of Sulfur-Doped TiO2/Reduced Graphene Oxide Composite (S-TiO2/rGO) with Improved Photocatalytic Activity for the Removal of Diclofenac from Water, Materials 13 (2020) 1621.
  55. Vladimir Radulovic, Yuichi Yamazaki, Zeljko Pastuovic, Adam Sarbutt, Klemen Ambrozic, Robert Bernat, Zoran Eres, Jose Coutinho, Takeshi Ohshima, Ivana Capan, Luka Snoj, Silicon Carbide Neutron Detector Testing at the JSI TRIGA Reactor for Enhanced Border and Port Security, Nuclear Inst. and Methods in Physics Research, A 972 (2020) 164122.
  56. Ivana Capan, Tomislav Brodar, Yuichi Yamazaki, Yuya Oki, Takeshi Ohshima, Yoji Chiba, Yasuto Hijikata, Luka Snoj and Vladimir Radulović, Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC, Nuclear Inst. and Methods in Physics Research, B 478 (2020) 224.
  57. Tomislav Brodar, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, Željko Pastuović, Depth profile analysis of deep level defects in 4H-SiC introduced by radiation, Crystals 10 (2020) 845.
  58. José Coutinho, Vitor J. B. Torres, Ivana Capan, Tomislav Brodar, Zoran Ereš, Robert Bernat, Vladimir Radulović, Klemen Ambrožič, Luka Snoj, Željko Pastuović, Adam Sarbutt, Takeshi Ohshima, Yuichi Yamazaki, Takahiro Makino, Silicon carbide diodes for neutron detection, Nuclear Inst. and Methods in Physics Research, A 986 (2021) 164793. (review paper)
  59. Robert Bernat, Ivana Capan, Luka Bakrač, Tomislav Brodar, Takahiro Makino, Takeshi Ohshima, Željko Pastuović and Adam Sarbutt, Response of 4H-SiC Detectors to Ionizing Particles, Crystals 11 (2021) 10.
  60. Tihomir Knežević, Tomislav Suligoj, Ivana Capan and Lis K. Nanver, Low-temperature electrical performance of PureB photodiodes revealing Al-metallization-related degradation of dark currents, IEEE Transactions on Electron Devices  68 (2021) 2810.
  61. J. Coutinho, J. D. Gouveia, T. Makino, T. Ohshima, Ž. Pastuović, L. Bakrač, T. Brodar, and I. Capan,  M-center in 4H-SiC is a carbon self-interstitial, Physical Review B 103 (2021) L180102.
  62. Vedran Kojić,Mario Bohač,Arijeta Bafti,Luka Pavić,Krešimir Salamon,Tihana Čižmar ,Davor Gracin,Krunoslav Juraić,Mirela Leskovac,Ivana Capan and Andreja Gajović, Formamidinium Lead Iodide Perovskite Films with Polyvinylpyrrolidone Additive for Active Layer in Perovskite Solar Cells, Enhanced Stability and Electrical Conductivity, Materials 14 (2021) 4594.
  63. Tihana Čižmar, Ivana Panžić, Ivana Capan, Andreja Gajović, Nanostructured TiO2 photocatalyst modified with Cu for improved imidacloprid degradation, Applied Surface Science 569 (2021) 151026.
  64. Robert Bernat, Luka Bakrač, Vladimir Radulović, Luka Snoj, Takahiro Makino, Takeshi Ohshima, Željko Pastuović, Ivana Capan, 4H-SiC Schottky barrier diodes for efficient thermal neutron detection, Materials 14 (2021) 5105.
  65. I. Capan, T. Brodar, R. Bernat, Ž. Pastuović, T. Makino, T. Ohshima, J. D. Gouveia, J. Coutinho, M-center in 4H-SiC: isothermal DLTS and first principles modeling studies, Journal of Applied Physics 130 (2021) 125703.
  66. Ivana Capan, Tomislav Brodar, Takahiro Makino, Vladimir Radulovic and Luka Snoj, M-center in neutron irradiated 4H-SiC, Crystals 11 (2021) 1404.
  67. Ivana Panžić, Ivana Capan, Tomislav Brodar, Arijeta Bafti, Vilko Mandić, Structural and electrical characterization of pure and Al-doped ZnO nanorods, Materials 14 (2021) 7454.
  68. Ivana Capan, 4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review, Electronics 11 (2022) 532.
  69. Ivana Capan and Tomislav Brodar, Majority and Minority Charge Carrier Traps in n-type 4H-SiC Studied by Junction Spectroscopy Techniques, Electronic materials 3 (2022) 115. (review paper)
  70. Tihomir Knežević, Amira Hadžipašić, Takeshi Ohshima, Takahiro Makino, and Ivana Capan, M-center in low-energy electron irradiated 4H-SiC, Applied Physics Letters 120 (2022) 252101.  
  71. Tihomir Knežević, Tomislav Brodar, Vladimir Radulović, Luka Snoj, Takahiro Makino, and Ivana Capan, Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS, Applied Physics Express 15 (2022) 101002.
  72. Vitor J. B. Torres, Ivana Capan, and Jose Coutinho, Theory of shallow and deep boron defects in 4H-SiC, Physical Review B 106 (2022) 224112.
  73. Robert Bernat, Tihomir Knežević, Vladimir Radulović, Luka Snoj, Takahiro Makino, Takeshi Ohshima, and Ivana Capan, Radiation response of the large area 4H-SiC Schottky barrier diodes, Materials 16 (2023) 2022.
  74. Tihomir Knežević,  Eva Jelavić, Yuichi Yamazaki, Takeshi Ohshima, Takahiro Makino, and Ivana Capan, Boron-Related Defects in N-Type  4H-SiC Schottky Barrier Diodes, Materials  16 (2023) 3347.
  75. Ivana Capan, Robert Bernat, Takahiro Makino, Tihomir Knežević, 4H-SiC Schottky barrier diodes as radiation detectors: A role of Schottky contact area, Diamond and Related Materials 137 (2023) 110072.
  76. Ivana Capan, Wide-bandgap semiconductors for radiation detection: A review, Materials 17 (2024) 1147.





Talk presentations:


1.  «Neutron Irradiation Induced Defects in Silicon; Interstitial clusters?», Hydrogen in Silicon Meeting, 21.-22.11.2002., UMIST, Manchester, UK.

2. «Temperature dependent defect production in gamma irradiated silicon», 17-29.07.2004., Radiation Effects in Solids, Erice, Italy

3. «Electrically active defects induced by neutron irradiation in silicon», 25.-29.09.2004. 1st CADRES Workshop, Catania, Italy

4. «Germanij – poluvodič budućnosti?», 01.02.2007. Zavodski kolokvij, Zavod za primijenjenu fiziku, FER, Zagreb (invited seminar)

5.  «Električki aktivni defekti u siliciju i germaniju uvedeni zračenjem», 17.05.2007. Seminar ZFM-a, IRB, Zagreb

6.  Structural properties of Ge nanocrystals embedded in SiO2”, 21.-25.05.2007, MIPRO, Opatija.

7. “Radijacioni defekti u germaniju”, 05.06.2008., Pristupno predavanje, IRB, Zagreb

8. "Laplace transform spectroscopy studies of radiation induced defects in germanium", 22-26.09.2008, JVC-12, Balatonalmadi, Hungary (invited talk)

9.  “Nanostructures for the next generation of semiconductor devices”, 29-30.06.2009, Croatian - Japanese Workshop on Materials Science, Zagreb, Croatia

10. “Germanium…new perspectives“, 30.09.2009, Groupe de Physique des Matériaux, Université de Rouen, Saint Etienne du Rouvray, France (invited seminar)

11. «Radiation induced defects in silicon and germanium », 23.10.2009, Department of Environmental Sciences, Jozef Stefan Institute, Ljubljana, Slovenia (invited seminar)

12. “Laplace DLTS”, 25.11.2009., Radionica-Nove napredne metode u istraživanju materijala, IRB-Zagreb

13. “DLTS study of defects … from point-like defects to quantum dots”, 06.09.2010, LAAS-CNRS, Toulouse, France (invited seminar)

14. «Electrical characterization of semiconductor nanocrystals: The role of interface», 02-03.06.2011., 18th Vacuum Meeting, Bohinj, Slovenija (invited talk).

15. «Electrical characterization of semiconductor nanocrystals», 08.07.2011, University of Minho, Braga, Portugal (invited seminar)

16. «Electrical characterization of semiconductor nanocrystals», 9-12.11.2011, COST NanoTP, Trieste, Italy (invited talk)

17. »Electrically active defects induced by radiation», 12.04.2012, Jozef Stefan Institute, Ljubljana, Slovenia (seminar)

18. «Electrically active defect in semiconductors induced by radiation», 7-10.05.2012, 2nd RBI Detector Workshop, Plitvice Lakes, Croatia (talk)

19. «Electrical characterization of interfaces and embedded nanocrystals», 21.06.2012, Institut für Materialphysik, Münster, Germany (seminar)

20. «Radiation induced defects: electrical and optical study», 13-24.08.2012., Joint ICTP-IAEA Workshop on Physics of Radiation Effect and its Simulation for Non-Metallic Condensed Matter, ICTP,Trieste, Italy (invited lecturer)

21. «Generation of vacancy-related defects during focused swift-ion beam implantation of silicon», 8-10.10.2012, Silicon Detector Workshop, Split, Croatia (talk)

22. «Kvantne točke; umjetni atomi», 18-20.04.2013., Otvoreni dani IRB-a, Zageb

23. «Nanočestice», 05.02.2014., Hrvatski zavod za zaštitu zdravlja i sigurnost na radu, Zagreb, Hrvatska (invited seminar)

24. «Kvantne točke», 14.6.2014., Đir po Ruđeru, Zagreb, Hrvatska

25. „Capacitance transient spectroscopy“, 27.04.2015, Institut des Matériaux Jean Rouxel, Nantes, France (seminar)

26. „Poluvodički nanokristali; Od memorija do solarnih ćelija“, 14.12.2015., Sveučilište u Osijeku

27. „e-SiCure project“, 29-30.03.2017, Detector workshop, University of York, York, UK

28. „Kako rade detektori?“, 13.05.2017., ODI2017, Institut Ruđer Bošković

29. „Radiation hardness of 4H-SiC epitaxial layers“, 18 – 19 May, 2017, 24th International Scientific Meeting on Vacuum Science and Technique, Zadar, Croatia (invited talk)

30. „Electrically active defects in 4H-SiC“, 20-22 November 2017, CERN, RD50 meeting

31. „Detektori“, 27.12.2017, PMF, Univerzitet u Tuzli, BIH (invited seminar)

32. „Electrically active defects in semiconductors“, May 30, 2018, QST, Takasaki, Japan

33. „e-SiCure project“, NATO ARW on Explosives Detection, 17-18 October 2018, Florence, Italy (invited talk)

34. „Electrically active defects: Laplace DLTS study“, 30 November 2018, ANSTO, AUS

35. „What can we learn about defect centers with capatitance transient spectroscopy?“, Ion beams for future technologies, April 1-3, 2019, Dubrovnik, Croatia (invited talk)

36. „Electrically active defects in semiconductor materials for solar cells“, Workshop on Solar Energy Materials, May 9-10, 2019, Zagreb, Croatia (invited talk)

37. „Neutron irradiation induced defects in 4H-SiC“, International Conference on Radiation Effects on Electrical Devices (ICREED), May 29-31, Chongqing, China (invited talk)

38. „Electrically active defects in n-type 4H-SiC introduced by neutron radiation“, IVC-21, July 1 -5, 2019, Malmo, Sweden

39. „e-SiCure project“, NATO SPS Cluster Workshop on Key Priority Area Advanced Technologies, 17 -18 September, Leuven, Belgium

40. „Silicon carbide radiation detectors“, Workshop on Dual-Use and Emerging Technologies, RACVIAC, FER, University of Zagreb, Feb. 25, 2021 (invited talk)

41. „Border security: How to detect spatial nuclear material?“, SCIRES 2021, June 10 -11, 2021, Zagreb, Croatia (invited talk)

42. „Enhancing security at borders and ports (e-SiCure2)“, NATO SPS Information Day, April 8, 2022, Zagreb, Croatia (invited talk)

42. „Junction spectroscopy techniques for studying the radiation-induced defects“, First IMSci-Nu School, 27.02-03.03.2023, Aix Marseille Universite, Marseille, France (invited lecturer)

43. „Silicon carbide for radiation detection“, 28th HSKIKI Conference, 28-31.03.2023., Rovinj, Croatia (invited talk)







  • October – December 2002, Centre for Electronic Materials, UMIST, UK
  • March – June 2003,Centre for Electronic Materials, UMIST, UK
  • October 2005, Centre for Electronic Materials, Devices and Nanostructures, University of Manchester, UK
  • February 2006, Centre for Electronic Materials, Devices and Nanostructures, University of Manchester, UK
  • June 2007, Microelectronics & Nanostructures Group, University of Manchester, UK



Short visits:


  • 07-14.10.2006, InESS-CNRS, Strasbourg, France
  • 17-21.21.2005, PHASE-CNRS, Strasbourg, France
  • 27-29.11.2008, Jozef Stefan Institute, Slovenia
  • 06-09.06.2009, Jozef Stefan Institute, Slovenia
  • 25.09-01.10.2009, Groupe de Physique des Matériaux, Université de Rouen, Saint Etienne du Rouvray, France
  • 22-24.10.2009, Jozef Stefan Institute, Slovenia
  • 22.04 - 02.05.2010, University of Manchester, UK
  • 17-18.06.2010, Jozef Stefan Institute, Slovenia
  • 02.07-08.07.2010, Groupe de Physique des Matériaux, Université de Rouen, Saint Etienne du Rouvray, France
  • 05.09-08.09.2010, LAAS-CNRS, Toulouse, France
  • 13.06 - 26.06.2011, University of Manchester, UK
  • 07.07-10.07.2011, University of Minho, Braga, Portugal
  • 18.03 - 24.03.2012, University of Manchester, UK
  • 11.04-14.04.2012, Jozef Stefan Institute, Slovenia
  • 18.06-25.06.2012, Institut für Materialphysik, Münster, Germany
  • 04.04-06.04.2013, Jozef Stefan Institute, Slovenia
  • 24.07-31.17.2013, Institut für Materialphysik, Münster, Germany
  • 25.10- 28.10.2013, Jozef Stefan Institute, Slovenia
  • 10.07-13.07.2014., Jozef Stefan Institute, Slovenia
  • 25.10- 27.10.2014, Jozef Stefan Institute, Slovenia
  • 26.04-30.04.2015, Institut des Matériaux Jean Rouxel, Nantes, France
  • 10.07-12.07.2015., Jozef Stefan Institute, Slovenia
  • 08.11-11.11.2015, Institut des Matériaux Jean Rouxel, Nantes, France
  • 05.12-07.12.2015., Jozef Stefan Institute, Slovenia
  • 02.07-07.07.2016, Institut des Matériaux Jean Rouxel, Nantes, France
  • 12.11-18.11.2017, University of Manchester, UK





Poster presentations at conferences/workshops/schools:


1.     Scientific meeting of Croatian Physical Society, 1-3.12.1999.,Zagreb,Croatia.

2.     8th Joint Vacuum Conference, 4-9.6.2000., Pula, Croatia.

3.     8th Joint meeting of Croatian and Slovenian Vacuum societies, 23.5.2001., Brdo pri Kranju, Slovenija.

4.     Scientific meeting of Croatian Physical Society, 5-7.12.2001.,Zagreb,Croatia.

5.     9th Joint Vacuum Conference, 16-20.6.2002., Seggau, Austria.        

6.     New Directions in Mesoscopic Physics (Towards Nanoscience), 20.7.-1.8.2002., Erice, Italy.

7.     The Physics of Group IV Semiconductors, 07.-10.04.2003., Exeter, UK.

    1. Radiation Effects in Solids, 17-29.07.2004., Erice, Italy

9.     E-MRS Spring Meeting 2005, Strasbourg, France.

10.  E-MRS Spring Meeting 2006, Nice, France.

11.  2nd GISAXS Workshop, DESY, Hamburg, Germany.

12.  E-MRS Spring Meeting 2010, Strasbourg, France.

13.  MRS Fall Meeting, Boston, MA, USA.

14.  E-MRS Spring Meeting, 2011, Nice, France.

15.  E-MRS Spring Metting 2012, Strasbourg, France

16.  COST NanoTP, Berlin, Germany, 8-12.12.2012.

17.  E-MRS Spring Metting 2013, Strasbourg, France

18.  COST NanoTP, Mons, Belgium, September 2013

19.  COST NanoTP, Nantes, France, 2-5 April 2014

20.  Joint meeting of Croatian and Slovenian Vacuum societies, 08.-09.05.2014., Samobor, Hrvatska

    1. E-MRS Spring Meeting 2016, Lille, France
    2. ICSCRM, 22-25.09.2017, Washington DC, USA

23.  E-MRS Spring Meeting 2018, Strasbourg, France






o   22.4.-24.5.2002., School on Synchrotron Radiation, ICTP, Trieste, Italy.

    • 20.7.-1.8.2002., New Directions in Mesoscopic Physics (Towards Nanoscience), Erice, Italy.
    • 31.03.-01.04.2003., Introduction to Ion Beam Technology, University of Surrey, Guildford, UK.

o   17-29.07.2004., Radiation Effects in Solids, Erice, Italy

o   05-10.09.2004. , Nanoscience and Nanotechnologies, Losinj Summer School, Mali Lošinj, HR

o   07-18.02.2005., Winter College on Optics and Photonics in Nanoscience and Technology, ICTP, Trieste,Italy.

o   07.-12.03.2005., 4th European Winter School (NESY 2005), Research with Neutron And Synchrotron Radiation, Planneralm, Austria

    • 22-27.10.2006., 50th IUVSTA Workshop, Dubrovnik, HR
    • 09.-11.05.2007. 2nd GISAXS Workshop, DESY, Hamburg, Germany